Part Number | SISS23DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 50A PPAK 1212-8S |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8840pF @ 15V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 20A, 4.5V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8S (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Image |
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