Part Number | SIS990DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 100V 12.1A 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12.1A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 50V |
Power - Max | 25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 1212-8 Dual |
Supplier Device Package | PowerPAK 1212-8 Dual |
Image |
SiS990DN-T1-GE3
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