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Description
DATASHEET powered by HKIN - Datasheet (Result Page) About 10 results (0.30 seconds) Web (5) SiS488DN Datasheet SiS488DN Datasheet Jul 29, 2013 0.0055 at VGS = 10 V. 40g. 9.8 nC. 0.0075 at VGS = 4.5 V. 40g. Ordering Information: SiS488DN - T1 - GE3 (Lead (Pb)-free and Halogen-free). 1. clipped from Google - 9/2016 DC2118A - LTC4040Battery Charger and Backup Power Manager DC2118A - LTC4040Battery Charger and Backup Power Manager Apr 30, 2015 Q2. XSTR, MOSFET N-CHANNEL, 20-V. VISHAY, SiS424DN-T1-GE3 VISHAY, SiS488DN - T1 - GE3 . 8. 1. RNTC. RES., 10k, 1/16W, 1%, 0402. clipped from Google - 9/2016 SiC413 Datasheet SiC413 Datasheet Output voltage feedback input. ORDERING INFORMATION. Part Number. Package. SiC413CB- T1 - E3 . SO-8 (6.2 x 5 x 1.75 mm). SiC413DB. Reference board. clipped from Google - 9/2016 LTC4040 2.5A Battery Backup Power Manager LTC4040 2.5A Battery Backup Power Manager FAULT. PFO. RST. CHRG. CLPROG. 178k. 60.4k. 243k. L1: COILCRAFT XAL- 5030-222. MN2: VISHAY/SILICONIX SIR424DP- T1 - GE3 . 18.2k. 4.7 H. 1M. 10nF. clipped from Google - 9/2016 LTC4040 - 2.5A LTC4040 - 2.5A MN1: VISHAY/SILICONIX SiS488DN . MN2: VISHAY/SILICONIX SIR424DP- T1 - GE3 . VPWR. . . . LTC3226. PowerPath clipped from Google - 9/2016 1 2 powered by Custom Search HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: . Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}>
| Part Number | SIS488DNT1GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 40V 40A 1212-8 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK 1212-8 |
| Package / Case | PowerPAK 1212-8 |
| Image |  |
SIS488DN-T1-GE3
Vishay Thin Film
10065
0.38
HK HEQING ELECTRONICS LIMITED
SIS488DN-T1-GE3
VISH
1000
1.155
HK FEILIDI ELECTRONIC CO., LIMITED
SIS488DN-T1-GE3
Vishay / BC Components
12565
1.93
CIS Ltd (CHECK IC SOLUTION LIMITED)
SiS488DN-T1-GE3
VISHAY GENERAL
8228
2.705
Gallop Great Holdings (Hong Kong) Limited
SIS488DN-T1-GE3
Vishay Siliconix
1000
3.48
Kunlida Electronics (HK) Limited
