Part Number | SIS435DNT-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 30A 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 39W (Tc) |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 13A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SiS435DNT-T1-GE3
Vishay Thin Film
9070
0.41
KDH SEMICONDUCTOR CO., LIMITED
SiS435DNT-T1-GE3
VISH
4004
1.63
HK HEQING ELECTRONICS LIMITED
SIS435DNT-T1-GE3
Vishay / BC Components
9237
2.85
Shenzhen Chuanlan Electronics Ltd
SiS435DNT-T1-GE3
VISHAY GENERAL
5493
4.07
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIS435DNT-T1-GE3
Vishay Siliconix
4992
5.29
King-Pai Technology (HK) Co.,Limited