Part Number | SIS424DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 35A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 39W (Tc) |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 19.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SIS424DN-T1-GE3
Vishay Thin Film
6225
0.03
HK HEQING ELECTRONICS LIMITED
SIS424DN-T1-GE3
VISH
4805
0.7325
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiS424DN-T1-GE3
Vishay / BC Components
336
1.435
Gallop Great Holdings (Hong Kong) Limited
SIS424DN-T1-GE3
VISHAY GENERAL
2182
2.1375
HITO TECHNOLOGY LIMITED
SIS424DN-T1-GE3
Vishay Siliconix
5952
2.84
Yingxinyuan INT'L (Group) Limited