Part Number | SIRA24DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 60A SO8 |
Series | TrenchFET Gen IV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V |
Vgs (Max) | +20V, -16V |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIRA24DP-T1-GE3
Vishay Thin Film
6000
1.87
SOUTHCHIP LIMITED
SiRA24DP-T1-GE3
VISH
35800
3.1175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIRA24DP-T1-GE3
Vishay / BC Components
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4.365
CRYSTALTEK CO., LIMITED
SIRA24DP-T1-GE3
VISHAY GENERAL
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5.6125
Mooney Technology (Hong Kong) Limited
SIRA24DP-T1-GE3
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6000
6.86
ANCHIP TECHNOLOGY CO., LIMITED