Part Number | SIR888DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 40A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5065pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
Rds On (Max) @ Id, Vgs | 3.25 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR888DP-T1-GE3
Vishay Thin Film
5921
0.89
Dedicate Electronics (HK) Limited
SIR888DP-T1-GE3
VISH
1000
1.52
MY Group (Asia) Limited
SIR888DP-T1-GE3
Vishay / BC Components
3502
2.15
Lionfly Tech (HK) International Group Co., Limited
SIR888DP-T1-GE3
VISHAY GENERAL
70000
2.78
ALPINE ELECTRONICS LTD
SIR888DP-T1-GE3
Vishay Siliconix
15000
3.41
HONG KONG CHIPWAY INTERNATIONAL LIMITED