Part Number | SIR840DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V PPAK SO-8 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR840DP-T1-GE3
Vishay Thin Film
5157
1.49
HK HEQING ELECTRONICS LIMITED
SIR840DP-T1-GE3
VISH
8319
2.1125
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR840DP-T1-GE3
Vishay / BC Components
8669
2.735
SUMMER TECH(HK) LIMITED
SIR840DP-T1-GE3
VISHAY GENERAL
9672
3.3575
Cicotex Electronics (HK) Limited
SIR840DP-T1-GE3
Vishay Siliconix
4830
3.98
Nosin (HK) Electronics Co.