Part Number | SIR838DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 150V 35A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2075pF @ 75V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 8.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR838DP-T1-GE3
Vishay Thin Film
1829
0.16
HK HEQING ELECTRONICS LIMITED
SIR838DP-T1-GE3
VISH
1903
1.29
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR838DP-T1-GE3
Vishay / BC Components
7804
2.42
N&S Electronic Co., Limited
SIR838DP-T1-GE3
VISHAY GENERAL
3293
3.55
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR838DP-T1-GE3
Vishay Siliconix
1382
4.68
Gallop Great Holdings (Hong Kong) Limited