Part Number | SIR646DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 60A PPAK 8SO |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 54W (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR646DP-T1-GE3
Vishay Thin Film
5000
1.73
Gallop Great Holdings (Hong Kong) Limited
SIR646DP-T1-GE3
VISH
1000
2.65
MY Group (Asia) Limited
SIR646DP-T1-GE3
Vishay / BC Components
7891
3.57
KDH SEMICONDUCTOR CO., LIMITED
SIR646DP-T1-GE3
VISHAY GENERAL
7891
4.49
HK HEQING ELECTRONICS LIMITED
SIR646DP-T1-GE3
Vishay Siliconix
8891
5.41
CIS Ltd (CHECK IC SOLUTION LIMITED)