Part Number | SIR644DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR644DP-T1-GE3
Vishay Thin Film
22050
0.39
HK HEQING ELECTRONICS LIMITED
SIR644DP-T1-GE3
VISH
6000
0.8725
Shenzhen Pohonda Electronics Co.,Ltd.
SIR644DPT1GE3
Vishay / BC Components
800
1.355
FLOWER GROUP(HK)CO.,LTD
SIR644DP-T1-GE3
VISHAY GENERAL
50000
1.8375
Yingxinyuan INT'L (Group) Limited
SiR644DP-T1-GE3
Vishay Siliconix
8228
2.32
Gallop Great Holdings (Hong Kong) Limited