Part Number | SIR642DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4155pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR642DP-T1-GE3
Vishay Thin Film
15520
1.28
HK HEQING ELECTRONICS LIMITED
SIR642DP-T1-GE3
VISH
584
2
Gallop Great Holdings (Hong Kong) Limited
SIR642DP-T1-GE3
Vishay / BC Components
35800
2.72
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR642DPT1GE3
VISHAY GENERAL
1650
3.44
FLOWER GROUP(HK)CO.,LTD
SIR642DP-T1-GE3
Vishay Siliconix
5998
4.16
Huajiaxin Electronic Technology (Hong Kong) Co., Limited