Part Number | SIR640DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4930pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR640DP-T1-GE3
Vishay Thin Film
10065
0.52
HK HEQING ELECTRONICS LIMITED
SIR640DP-T1-GE3
VISH
5000
1.525
Gallop Great Holdings (Hong Kong) Limited
SIR640DP-T1-GE3
Vishay / BC Components
55300
2.53
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIR640DP-T1-GE3
VISHAY GENERAL
5998
3.535
Y.H.X ELECTRONIC TECHNOLOGY HK LIMITED
SIR640DP-T1-GE3
Vishay Siliconix
5998
4.54
Huajiaxin Electronic Technology (Hong Kong) Co., Limited