Part Number | SIR436DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 40A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1715pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR436DP-T1-GE3
Vishay Thin Film
6389
1.7
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIR436DP-T1-GE3
VISH
1140
2.76
Hongkong Rixin International Trading Company
SIR436DP-T1-GE3
Vishay / BC Components
1590
3.82
Dan-Mar Components Inc.
SIR436DP-T1-GE3
VISHAY GENERAL
240
4.88
Acon Electronics Limited
SIR436DP-T1-GE3
Vishay Siliconix
18000
5.94
MY Group (Asia) Limited