Part Number | SIJ800DPT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 20A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 4.2W (Ta), 35.7W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIJ800DP-T1-GE3
Vishay Thin Film
1000
0.59
MY Group (Asia) Limited
SIJ800DP-T1-E3
VISH
28000
2
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED