Part Number | SIJ420DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 50A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3630pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 4.8W (Ta), 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIJ420DP-T1-GE3
Vishay Thin Film
538
0.94
Gallop Great Holdings (Hong Kong) Limited
SIJ420DP-T1-GE3
VISH
55200
2.005
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIJ420DP-T1-GE3
Vishay / BC Components
6000
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Mit International Limited
SIJ420DP-T1-GE3
VISHAY GENERAL
5000
4.135
HITO TECHNOLOGY LIMITED
SIJ420DP-T1-GE3
Vishay Siliconix
7575
5.2
Yingxinyuan INT'L (Group) Limited