Part Number | SIHP23N60E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 600V 23A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2418pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 227W (Tc) |
Rds On (Max) @ Id, Vgs | 158 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
SIHP23N60E-GE3
Vishay Thin Film
1000
0.29
MY Group (Asia) Limited
SIHP23N60E
VISH
70000
2.04
ALPINE ELECTRONICS LTD