Part Number | SIHF22N60E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 600V 21A TO220 |
Series | E |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Full Pack |
Package / Case | TO-220-3 Full Pack |
Image |
SIHF22N60E-GE3
Vishay Thin Film
1400
0.81
Bonase Electronics (HK) Co., Limited
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220360
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Cinty Int'l (HK) Industry Co., Limited
SIHF22N60E-GE3
Vishay / BC Components
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RX ELECTRONICS LIMITED
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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