Part Number | SIHF12N65E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 650V 12A TO-220 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1224pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 33W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Full Pack |
Package / Case | TO-220-3 Full Pack |
Image |
SIHF12N65E-GE3
Vishay Thin Film
5365
0.97
Dedicate Electronics (HK) Limited
SIHF12N65E-GE3
VISH
44450
2.365
Takson Electronics (H.K.) Co., Ltd.
SIHF12N50C
Vishay / BC Components
840
3.76
Ande Electronics Co., Limited
SIHF12N60E
VISHAY GENERAL
20000
5.155
Hong Kong In Fortune Electronics Co., Limited
SIHF12N60E-E3
Vishay Siliconix
50
6.55
Takson Electronics (H.K.) Co., Ltd.