Part Number | SIHD12N50E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CHAN 500V DPAK |
Series | E |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 550V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 886pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 114W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TA) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SIHD12N50E-GE3
Vishay Thin Film
55100
0.69
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIHD12N50E-GE3
VISH
7757
1.73
Viassion Technology Co., Limited
SIHD12N50E-GE3
Vishay / BC Components
220360
2.77
Cinty Int'l (HK) Industry Co., Limited
SIHD12N50EGE3
VISHAY GENERAL
14000
3.81
N&S Electronic Co., Limited
SIHD12N50E-GE3
Vishay Siliconix
1460
4.85
Find Chip Network (Beijing) Technology Co., Ltd.