Description
MOSFET 2N-CH 30V 7.4A 6-POWERPAK Series: TrenchFET? FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 7.4A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.6W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 2x5 Supplier Device Package: PowerPAK? (2x5)
Part Number | SIF912EDZ-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 7.4A 6-POWERPAK |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7.4A |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 7.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 2x5 |
Supplier Device Package | PowerPAK (2x5) |
Image |
SIF912EDZ-T1-E3
Vishay Thin Film
12200
1.19
HK HEQING ELECTRONICS LIMITED
SIF912EDZ-T1-E3
VISH
540273
1.7225
Cicotex Electronics (HK) Limited
SIF912EDZ-T1-E3
Vishay / BC Components
43000
2.255
N&S Electronic Co., Limited
SIF912EDZ-T1-E3
VISHAY GENERAL
39000
2.7875
Gallop Great Holdings (Hong Kong) Limited
SIF912EDZ-T1-E3
Vishay Siliconix
5500
3.32
CIS Ltd (CHECK IC SOLUTION LIMITED)