Part Number | SIE816DF-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 60V 60A POLARPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 19.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (L) |
Package / Case | 10-PolarPAK (L) |
Image |
SIE816DF-T1-E3
Vishay Thin Film
1000
0.63
MY Group (Asia) Limited
SIE816DF-T1-GE3
VISH
1000
1.07
MY Group (Asia) Limited