Part Number | SIE810DF-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 60A POLARPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (L) |
Package / Case | 10-PolarPAK (L) |
Image |
SIE810DF-T1-GE3
Vishay Thin Film
3000
0.64
Honeng Electronics Co Ltd
SIE810DF-T1-GE3
VISH
55800
1.0525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIE810DF-T1-GE3
Vishay / BC Components
10178
1.465
Viassion Technology Co., Limited
SIE810DF-T1-GE3
VISHAY GENERAL
1000
1.8775
MY Group (Asia) Limited
SIE810DF-T1-GE3
Vishay Siliconix
15000
2.29
MASSTOCK ELECTRONICS LIMITED