Part Number | SIB912DK-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 20V 1.5A SC-75-6 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A |
Rds On (Max) @ Id, Vgs | 216 mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 95pF @ 10V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SC-75-6L Dual |
Supplier Device Package | PowerPAK SC-75-6L Dual |
Image |
SIB912DK-T1-GE3
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Win-Win Electronic Technology Limited
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VISH
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Vishay / BC Components
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Tianke Electronics (HK) Limited
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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TOP-Q COMPONENT PTE. LTD