Part Number | SI9424BDY-T1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 5.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI9424BDY-T1-E3
Vishay Thin Film
4432
0.02
HK HEQING ELECTRONICS LIMITED
SI9424BDY-T1-E3
VISH
5852
1.165
Gallop Great Holdings (Hong Kong) Limited
SI9424BDY-T1-E3
Vishay / BC Components
288
2.31
Cicotex Electronics (HK) Limited
SI9424BDY-T1-E3
VISHAY GENERAL
2944
3.455
Far East Electronics Technology Limited
SI9424BDY-T1-E3
Vishay Siliconix
1809
4.6
Shenzhen WTX Capacitor Co., Ltd.