Part Number | SI8808DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V MICROFOOT |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Image |
SI8808DB-T2-E1
Vishay Thin Film
6847
0.7
HK HEQING ELECTRONICS LIMITED
SI8808DB-T2-E1
VISH
6033
1.895
Shenzhen Zhenhong Micro Technology Co., Ltd
SI8808DB-T2-E1
Vishay / BC Components
7170
3.09
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI8808DB-T2-E1
VISHAY GENERAL
9527
4.285
Gallop Great Holdings (Hong Kong) Limited
SI8808DB-T2-E1
Vishay Siliconix
9290
5.48
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED