Part Number | SI8806DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 12V MICROFOOT |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 43 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA |
Image |
SI8806DBT2E1
Vishay Thin Film
6254
1.64
Dedicate Electronics (HK) Limited
SI8806DB-T2-E1
VISH
725
2.36333333333333
Digchip Technology Co.,Limited
SI8806DB-T2-E1
Vishay / BC Components
5371
3.08666666666667
HK KANXINRUI TECHNOLOGY LIMITED
SI8806DB
VISHAY GENERAL
6836
3.81
Dedicate Electronics (HK) Limited