Part Number | SI8487DB-T1-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 30V MICROFOOT |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2240pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Image |
SI8487DB-T1-E1
Vishay Thin Film
5862
1.58
HK HEQING ELECTRONICS LIMITED
SI8487DB-T1-E1
VISH
100000
1.9725
Wonston Electronics Limited
SI8487DB-T1-E1
Vishay / BC Components
100
2.365
Semic Pte. Ltd
SI8487DB-T1-E1
VISHAY GENERAL
212
2.7575
Gallop Great Holdings (Hong Kong) Limited
SI8487DB-T1-E1
Vishay Siliconix
90000
3.15
Redstar Electronic Limited