Part Number | SI8429DB-T1-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 8V 11.7A 2X2 4-MFP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 4V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 2.77W (Ta), 6.25W (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA, CSPBGA |
Image |
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