Part Number | SI8402DB-T1-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 5.3A 2X2 4-MFP |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.47W (Ta) |
Rds On (Max) @ Id, Vgs | 37 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA, CSPBGA |
Image |
SI8402DB-T1-E1
Vishay Thin Film
850
0.27
Xinye International Technology Limited
SI8402DB-T1-E1
VISH
2582
1.18
HK HEQING ELECTRONICS LIMITED
SI8402DB-T1-E1
Vishay / BC Components
6410
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E-CORE COMPONENT CO., LIMITED
SI8402DB-T1-E1
VISHAY GENERAL
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Gallop Great Holdings (Hong Kong) Limited
SI8402DB-T1-E1
Vishay Siliconix
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3.91
Cicotex Electronics (HK) Limited