Part Number | SI7882DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 12V 13A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 17A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7882DP-T1-GE3
Vishay Thin Film
8217
0.68
Gallop Great Holdings (Hong Kong) Limited
SI7882DP-T1-GE3
VISH
50000
1.4025
Hong Kong Yingweida Electronics Co., Ltd.
SI7882DP-T1-GE3
Vishay / BC Components
35200
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI7882DP-T1-GE3
VISHAY GENERAL
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N&S Electronic Co., Limited
SI7882DP-T1-GE3
Vishay Siliconix
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Shenzhen WTX Capacitor Co., Ltd.