Part Number | SI7860ADP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 11A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7860ADP-T1-E3
Vishay Thin Film
10000
0.86
Hong Kong Capital Industrial Co.,Ltd
SI7860ADP-T1-E3
VISH
2010
1.6425
HXY Electronics (HK) Co.,Limited
SI7860ADP-T1-E3
Vishay / BC Components
50000
2.425
Hong Kong Yingweida Electronics Co., Ltd.
SI7860ADP-T1-E3
VISHAY GENERAL
35200
3.2075
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI7860ADP-T1-E3
Vishay Siliconix
1000
3.99
MY Group (Asia) Limited