Part Number | SI7772DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 35.6A PPAK SO-8 |
Series | SkyFET, TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 35.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1084pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
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