Part Number | SI7491DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 30V 11A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7491DP-T1-E3
Vishay Thin Film
55322
1.1
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI7491DP-T1-E3
VISH
1016
2.345
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7491DP-T1-E3
Vishay / BC Components
5000
3.59
HK Niuhuasi Technology Limited
SI7491DP-T1-E3
VISHAY GENERAL
4447
4.835
Bonase Electronics (HK) Co., Limited
SI7491DP-T1-E3
Vishay Siliconix
1000
6.08
MY Group (Asia) Limited