Part Number | SI7460DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 60V 11A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
Si7460DP-T1-E3
Vishay Thin Film
17854
0.91
Gallop Great Holdings (Hong Kong) Limited
SI7460DP-T1-E3
VISH
180
1.75
SUNTOP SEMICONDUCTOR CO., LIMITED
Si7460DP-T1-E3
Vishay / BC Components
50000
2.59
Hong Kong Yingweida Electronics Co., Ltd.
SI7460DP-T1-E3
VISHAY GENERAL
12000
3.43
Belt (HK) Electronics Co
SI7460DP-T1-E3
Vishay Siliconix
12000
4.27
ASAP Electronics PTE Ltd.