Part Number | SI7403BDN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 8A 1212-8 PPAK |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 9.6W (Tc) |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 5.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7403BDN-T1-GE3
Vishay Thin Film
10000
0.67
Finestock Electronics HK Limited
SI7403BDN-T1-GE3
VISH
10840
1.435
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7403BDN-T1-GE3
Vishay / BC Components
6024
2.2
Ande Electronics Co., Limited
SI7403BDN-T1-GE3
VISHAY GENERAL
1000
2.965
MY Group (Asia) Limited
SI7403BDN-T1-GE3
Vishay Siliconix
18000
3.73
MASSTOCK ELECTRONICS LIMITED