Part Number | SI7392DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 9A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 9.75 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7392DP-T1-GE3
Vishay Thin Film
5877
0.68
Dedicate Electronics (HK) Limited
SI7392DP-T1-GE3
VISH
1000
1.8875
MY Group (Asia) Limited
SI7392DP
Vishay / BC Components
47
3.095
Hengguang (HK) Electronics Trading Limited
SI7392DP-T1
VISHAY GENERAL
8000
4.3025
Hong Kong In Fortune Electronics Co., Limited
SI7392ADP-T1-E3
Vishay Siliconix
1000
5.51
MY Group (Asia) Limited