Part Number | SI6473DQ-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 6.2A 8-TSSOP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.08W (Ta) |
Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 9.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Image |
SI6473DQ-T1-E3
Vishay Thin Film
12832
0.46
Yu Hong Technologies Limited
SI6473DQ-T1-E3
VISH
1000
1.755
MY Group (Asia) Limited
SI6473DQ-T1-GE3
Vishay / BC Components
1000
3.05
MY Group (Asia) Limited
SI6473DQ
VISHAY GENERAL
3768
4.345
World Fuji Co.
SI6473DQ
Vishay Siliconix
180
5.64
CHIPSMALL LIMITED