Part Number | SI6410DQ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 7.8A 8-TSSOP |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 7.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Image |
SI6410DQ-T1-GE3
Vishay Thin Film
4284
1.39
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI6410DQ-T1-GE3
VISH
8461
2.72
Bonase Electronics (HK) Co., Limited
SI6410DQ-T1-GE3
Vishay / BC Components
5765
4.05
MY Group (Asia) Limited
SI6410DQ-T1-GE3
VISHAY GENERAL
6005
5.38
MASSTOCK ELECTRONICS LIMITED
SI6410DQ-T1-GE3
Vishay Siliconix
3455
6.71
JM COMPONENTS LIMITED