Part Number | SI5935DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2P-CH 20V 3A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3A |
Rds On (Max) @ Id, Vgs | 86 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
SI5935DC-T1-E3
Vishay Thin Film
9518
1.52
HK HEQING ELECTRONICS LIMITED
SI5935DC-T1-E3
VISH
5137
2.5575
Cicotex Electronics (HK) Limited
SI5935DC-T1-E3
Vishay / BC Components
8311
3.595
Ysx Tech Co., Limited
SI5935DC-T1-E3
VISHAY GENERAL
845
4.6325
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI5935DC-T1-E3
Vishay Siliconix
1611
5.67
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED