Description
MOSFET N/P-CH 30V 4A 1206-8 Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 7.1nC @ 5V Input Capacitance (Ciss) @ Vds: 435pF @ 15V Power - Max: 3.1W, 2.6W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5511DC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 30V 4A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A, 3.6A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
Power - Max | 3.1W, 2.6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
SI5511DC-T1-GE3
Vishay Thin Film
5000000
0.9
Hongkong Shengshi Electronics Limited
SI5511DC-T1-GE3
VISH
220360
1.65
Cinty Int'l (HK) Industry Co., Limited
SI5511DC-T1-GE3
Vishay / BC Components
8000
2.4
MY Group (Asia) Limited
SI5511DC-T1-GE3
VISHAY GENERAL
5247
3.15
Viassion Technology Co., Limited
SI5511DC-T1-GE3
Vishay Siliconix
35800
3.9
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED