Part Number | SI5463EDC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 3.8A 1206-8 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5463EDC-T1-GE3
Vishay Thin Film
5555
1.8
Dedicate Electronics (HK) Limited
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MY Group (Asia) Limited
SI5463EDC-T1-E3
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Hong Kong In Fortune Electronics Co., Limited
SI5463EDC-T1-E3
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