Part Number | SI5458DU-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 6A PPAK CHIPFET |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 10.4W (Tc) |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 7.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PowerPak ChipFet (3x1.9) |
Package / Case | 8-PowerVDFN |
Image |
SI5458DU-T1-GE3
Vishay Thin Film
8915
1.56
Dedicate Electronics (HK) Limited
SI5458DU-T1-GE3
VISH
518
2.195
HK KANXINRUI TECHNOLOGY LIMITED
SI5458DU
Vishay / BC Components
5557
2.83
Dedicate Electronics (HK) Limited