Part Number | SI5447DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 3.5A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 76 mOhm @ 3.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
Si5447DC-T1-E3
Vishay Thin Film
11030
1.36
CIS Ltd (CHECK IC SOLUTION LIMITED)
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6700
1.8725
Bonase Electronics (HK) Co., Limited
SI5447DC-T1-E3
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55200
2.385
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI5447DC-T1-E3
VISHAY GENERAL
1364
2.8975
RX ELECTRONICS LIMITED
SI5447DC-T1-E3
Vishay Siliconix
32000
3.41
ShenZhen YueXuan Technology Co,.Ltd.