Part Number | SI5445BDC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 8V 5.2A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 5.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5445BDC-T1-E3
Vishay Thin Film
1
0.87
Jiayu Electronic (HK) Limited
SI5445BDC-T1-E3
VISH
35800
1.6325
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI5445BDC-T1-E3
Vishay / BC Components
204488
2.395
Cicotex Electronics (HK) Limited
SI5445BDC-T1-E3
VISHAY GENERAL
10000
3.1575
Hong Kong Capital Industrial Co.,Ltd
SI5445BDC-T1-E3
Vishay Siliconix
911
3.92
Dan-Mar Components Inc.