Part Number | SI5433BDC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 4.8A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 37 mOhm @ 4.8A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5433BDC-T1-GE3 MOSFETIGBTIC
Vishay Thin Film
8611
0.68
Ysx Tech Co., Limited
SI5433BDC-T1-GE3
VISH
5690
1.445
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI5433BDC-T1-GE3
Vishay / BC Components
3249
2.21
WIN AND WIN ELECTRONICS LIMITED
SI5433BDC-T1-GE3
VISHAY GENERAL
6437
2.975
Cicotex Electronics (HK) Limited
SI5433BDC-T1-GE3
Vishay Siliconix
3707
3.74
CIS Ltd (CHECK IC SOLUTION LIMITED)