Part Number | SI4966DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 20V 8SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4966DY-T1-GE3
Vishay Thin Film
7584
0.61
MY Group (Asia) Limited
SI4966DY-T1-GE3
VISH
1038
1.8375
AIC Semiconductor Co., Limited
SI4966DY-T1-GE3
Vishay / BC Components
808
3.065
HK HEQING ELECTRONICS LIMITED
SI4966DY-T1-GE3
VISHAY GENERAL
3552
4.2925
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4966DY-T1-GE3
Vishay Siliconix
3390
5.52
TERNARY UNION CO., LIMITED