Part Number | SI4925BDYT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2P-CH 30V 5.3A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4925BDY-T1-E3
Vishay Thin Film
50000
1.54
Hong Kong Yingweida Electronics Co., Ltd.
SI4925BDY-T1-E3
VISH
4462
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Belt (HK) Electronics Co
SI4925BDY-T1-E3
Vishay / BC Components
907
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H.K. Zhilihua Electronics Limited
Si4925BDYT1E3
VISHAY GENERAL
3550
3.67
FLOWER GROUP(HK)CO.,LTD
SI4925BDY-T1-E3
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4868000
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Shenzhen WTX Capacitor Co., Ltd.