Part Number | SI4896DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 80V 6.7A 8SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.56W (Ta) |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4896DY-T1-GE3
Vishay Thin Film
21087
0.58
Gallop Great Holdings (Hong Kong) Limited
SI4896DY-T1-GE3
VISH
225800
1.94
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si4896DY-T1-GE3
Vishay / BC Components
5000000
3.3
Hongkong Shengshi Electronics Limited
SI4896DY-T1-GE3
VISHAY GENERAL
850000
4.66
Far East Electronics Technology Limited
SI4896DYT1GE3
Vishay Siliconix
2540
6.02
FLOWER GROUP(HK)CO.,LTD