Part Number | SI4686DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 18.2A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 5.2W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 13.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4686DY-T1-E3
Vishay Thin Film
25151
1.8
HK HEQING ELECTRONICS LIMITED
SI4686DY-T1-E3
VISH
850000
2.9125
Far East Electronics Technology Limited
SI4686DY-T1-E3
Vishay / BC Components
2000
4.025
E-star Trading Enterprise Limited
SI4686DY-T1-E3.
VISHAY GENERAL
30000
5.1375
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4686DY-T1-E3
Vishay Siliconix
4868000
6.25
Shenzhen WTX Capacitor Co., Ltd.